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| ? ! " #$$% ! & ' () (' * ( " ( ' ) ) ) ') ? 25v/13.5a, r ds(on) =6m ? (typ.) @ v gs =10v r ds(on) =7.5m ? (typ.) @ v gs =4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? avalanche rated ? ? ? ? ? reliable and rugged ? ? ? ? ? sop-8 package ? ? ? ? ? lead free available (rohs compliant) n-channel mosfet apm4230 handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm4230 k : apm4230 xxxxx xxxxx - date code lead free code ? power management in notebook computer, portable equipment and battery powered systems s s s g d d d d top view of sop ? 8 g s d d ( 5,6,7,8 ) (4) (1, 2, 3) d d s s note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! " #$$% # ! (t a = 25 c unless otherwise noted) " # $ (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 25 v gss gate-source voltage 20 v i d * continuous drain current 13.5 i dm * 300 s pulsed drain current v gs =10v 55 a i s * diode continuous forward current 3 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 2 p d * maximum power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm4230k symbol parameter test condition min. typ. max. unit drain-source avalanche ratings e as avalanche energy, single pulsed i d =20a, v dd =15v 45 mj static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 25 v v ds =20v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =13.5a 6 7.5 v gs =4.5v, i ds =10a 7.5 10 r ds(on) a drain-source on-state resistance v gs =4.5v, i ds =10a, t j =125 c 9.5 13 m ? v sd a diode forward voltage i sd =1a, v gs =0v 0.7 1.3 v gate charge characteristics b q g total gate charge 29 40 q gs gate-source charge 3.6 q gd gate-drain charge v ds =10v, v gs =4.5v, i ds =16a 12 nc ? ! " #$$% + ! % &' (t a = 25 c unless otherwise noted) apm4230k symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 2.3 ? c iss input capacitance 3300 c oss output capacitance 1180 c rss reverse transfer capacitance v gs =0v, v ds =15v, frequency=1.0mhz 790 pf t d(on) turn-on delay time 15 28 t r turn-on rise time 13 24 t d(off) turn-off delay time 122 170 t f turn-off fall time v dd =15v, r l =15 ? , i ds =1a, v gen =10v, r g =6 ? 53 75 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. ? ! " #$$% , 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 () ! power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain-source voltage (v) i d - drain current (a) normalized transient thermal resistacne thermal transient impedance square wave pulse duration (sec) 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20406080100120140160 0 3 6 9 12 15 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc ? ! " #$$% % () ! % &' v ds - drain-source voltage (v) i d - drain current (a) output characteristics r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) transfer characteristics v gs - gate-source voltage (v) i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold voltage 0246810 0 10 20 30 40 50 60 2v 2.5v 3v v gs = 4,5,6,7,8,9,10v 01234 0 10 20 30 40 50 60 t j =-55 o c t j =125 o c t j =25 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a 0 102030405060 0 2 4 6 8 10 12 14 v gs =10v v gs =4.5v ? ! " #$$% - () ! % &' drain-source on resistance normalized on resistance t j - junction temperature ( c) v sd - source-drain voltage (v) source-drain diode forward i s - source current (a) v ds - drain-source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) v gs - gate-source voltage (v) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 6m ? v gs = 10v i ds = 16a 0.00.20.40.60.81.01.21.4 1 10 60 t j =150 o c t j =25 o c 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 6000 frequency=1mhz crss coss ciss 0 10203040506070 0 2 4 6 8 10 v ds =10v i d = 16a ? ! " #$$% . t d (on) t r t d (off) t f v gs v ds 90% 10% * ! ( +* ,- ! ( ( +* dut 0.01 ? tp v dd v ds l i l r g v dd r d dut v gs v ds r g tp e as v dd t av i as v ds t p v dsx(su s) ? ! " #$$% / millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) ? ! " #$$% 0 terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p $ - (ir/convection or vpr reflow) !) , $ - profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. ? ! " #$$% !$ ( .$ t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles $ " )( table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. $ - % &' ? ! " #$$% !! , * anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 * ( application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 ( .$ % &' a j b t2 t1 c application a b c j t1 t2 w p e 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) |
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